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GaAs power metal-insulator-semiconductor field effect transistor with superlattice gate insulator and superlattice buffer structure

✍ Scribed by W.C. Liu; W.S. Lour; C.Y. Sun


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
356 KB
Volume
188
Category
Article
ISSN
0040-6090

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✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position