✦ LIBER ✦
A reliability study of insulated gate field effect transistors with an Al2O3-SiO2 gate structure : E. E. Lampi and E. F. Labuda. 10th IEEE Annual Proceedings, Reliability Physics (1972), p. 112
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 114 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.