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Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

✍ Scribed by Tsuyukuchi, Norio; Nagamatsu, Kentaro; Hirose, Yoshikazu; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

Book ID: 118069984
Publisher: Institute of Pure and Applied Physics
Year: 2006
Tongue: English
Weight: 135 KB
Volume: 45
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.45.l319

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