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Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

✍ Scribed by J. Kováč; A. Šatka; A. Chvála; D. Donoval; P. Kordoš; S. Delage

Book ID: 116748860
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 562 KB
Volume: 52
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2012.02.003

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