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Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

✍ Scribed by Tan, W. S.; Houston, P. A.; Parbrook, P. J.; Wood, D. A.; Hill, G.; Whitehouse, C. R.

Book ID: 115480290
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 287 KB
Volume: 80
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1473701

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## Abstract Al~2~O~3~/Si~3~N~4~ insulated‐gate AlGaN/GaN heterostructure field‐effect transistors (HFETs) have been fabricated, where the regrown ohmic structure was incorporated to reduce the contact resistance. Excellent DC and RF characteristics have been obtained together with the low gate leak