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Quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15 /GaAs heterostructure field-effect transistors

✍ Scribed by Byun, Y.H.; Schuermeyer, F.L.; Lee, K.; Shur, M.; Cook, P.; Martinez, E.; Martinez, E.J.; Evans, K.; Stutz, C.E.


Book ID
114537620
Publisher
IEEE
Year
1991
Tongue
English
Weight
315 KB
Volume
38
Category
Article
ISSN
0018-9383

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