Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy

✍ Scribed by Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen

• Book ID: 118172657
• Publisher: American Institute of Physics
• Year: 1999
• Tongue: English
• Weight: 397 KB
• Volume: 85
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.369527