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Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy

✍ Scribed by Kuo, T.Y.; Cunningham, J.E.; Schubert, E.F.; Tsang, W.T.; Chiu, T.H.; Ren, F.; Timp, G.; Fonstad, C.G.

Book ID: 114538495
Publisher: IEEE
Year: 1988
Tongue: English
Weight: 310 KB
Volume: 35
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.8879

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