Effect of symmetric and asymmetric In[sub 0.2]Ga[sub 0.8]As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode

✍ Scribed by Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H.

• Book ID: 120420173
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 747 KB
• Volume: 102
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2748870