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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

โœ Scribed by Ruden, P.P.; Shur, M.; Akinwande, A.I.; Nohava, J.C.; Grider, D.E.; Baek, J.

Book ID
114536899
Publisher
IEEE
Year
1990
Tongue
English
Weight
478 KB
Volume
37
Category
Article
ISSN
0018-9383

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Single quantum well transistor with modu
Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures
โœ K. Miyatsuji; H. Hihara; C. Hamaguchi ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 291 KB

Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGal\_xAs/GaAs/AlxGal\_xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily contro