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Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

✍ Scribed by A. Yu. Egorov; A. G. Gladyshev; E. V. Nikitina; D. V. Denisov; N. K. Polyakov; E. V. Pirogov; A. A. Gorbazevich

No coin nor oath required. For personal study only.

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