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A new δ-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer

✍ Scribed by H.M. Shieh; W.C. Hsu; M.J. Kao; C.L. Wu; T.S. Wu

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 232 KB
Volume: 36
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(93)90190-2

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