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A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition

✍ Scribed by W.C. Hsu; H.M. Shieh

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 240 KB
Volume: 35
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(92)90029-c

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