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Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor

✍ Scribed by T. Kawaguchi; M. Sato; H.I. Fujishiro; S. Nishi

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 370 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80140-8

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## Abstract This paper evaluates microwave performance in terms of scattering parameters and gains and presents the effect of gate‐to‐drain capacitance __C__~__gd__~ on the noise behavior of a pseudomorphic high‐electron mobility transistor (PHEMT). An analytical expression for __C__~__gd__~ is obt