(Al0.7Ga0.3)0.5In0.5 P/In0.15Ga0.85As/Ga As heterostructure field effect transistors with very thin highly p-doped surface layer

✍ Scribed by Dickmann, J.; Berg, M.; Geyer, A.; Daembkes, H.; Scholz, F.; Moser, M.

• Book ID: 114536020
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 612 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.370043