(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

✍ Scribed by Shih-Cheng Yang; Hsien-Chin Chiu; Yi-Jen Chan; Hao-Hsiung Lin; Jenn-Ming Kuo

• Book ID: 114538978
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 185 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.974726