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The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs

✍ Scribed by Hsien-Chin Chiu; Shih-Cheng Yang; Yi-Jen Chan; Shu-Han Chen; Wei-Sheng Liu; Jen-Inn Chyi


Book ID
114617282
Publisher
IEEE
Year
2004
Tongue
English
Weight
479 KB
Volume
51
Category
Article
ISSN
0018-9383

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## Sm x Sr 1 -x CoO 3 -Δ± (SSCx) materials are promising cathodes for IT-SOFCs. The influence of Sm content in SSCx (0.2 ≀ x ≀ 0.8) oxides on their oxygen nonstoichiometry, oxygen desorption, thermal expansion behavior, electrical conductivity and electrochemical activity for oxygen reduction is sy