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Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures

✍ Scribed by Chang, J. C. P.; Chen, Jianhui; Fernandez, J. M.; Wieder, H. H.; Kavanagh, K. L.

No coin nor oath required. For personal study only.

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