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Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect

✍ Scribed by I. L. Drichko; A. M. D’yakonov; I. Yu. Smirnov; Yu. M. Gal’perin; V. V. Preobrazhenskii; A. I. Toropov

No coin nor oath required. For personal study only.

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