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Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 −xAs and In0.2Ga0.8As/AlxGa1 −xAs heterostructures in high electric fields

✍ Scribed by J. Požela; K. Požela; R. Raguotis; V. Jucienė

Book ID: 111444968
Publisher: Springer
Year: 2011
Tongue: English
Weight: 246 KB
Volume: 45
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782611060212

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