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Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser

✍ Scribed by Bour, D. P.; Treat, D. W.; Thornton, R. L.; Paoli, T. L.; Bringans, R. D.; Krusor, B. S.; Geels, R. S.; Welch, D. F.; Wang, T. Y.

No coin nor oath required. For personal study only.

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