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Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy

โœ Scribed by Chin, T. P.; Kirchner, P. D.; Woodall, J. M.; Tu, C. W.


Book ID
121343728
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
678 KB
Volume
59
Category
Article
ISSN
0003-6951

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