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Selective growth of tensily strained Si1−yCy films on patterned Si substrates

✍ Scribed by A. Gouyé; F. Hüe; A. Halimaoui; O. Kermarrec; Y. Campidelli; M.J. Hÿtch; F. Houdellier; A. Claverie; D. Bensahel


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
425 KB
Volume
12
Category
Article
ISSN
1369-8001

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Thin films of CoSi2 on Si1−yCy substrate
✍ S. Teichert; M. Falke; H. Giesler; D.K. Sarkar; G. Beddies; H.-J. Hinneberg; G. 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 58 KB

The reaction of Co with epitaxial Si C (001) films is investigated with regard to dependence on annealing temperature 12y y and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for