Thin films of CoSi2 on Si1−yCy substrate layers

✍ Scribed by S. Teichert; M. Falke; H. Giesler; D.K. Sarkar; G. Beddies; H.-J. Hinneberg; G. Lippert; J. Griesche; H.J. Osten

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 58 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00282-8

✦ Synopsis

The reaction of Co with epitaxial Si C (001) films is investigated with regard to dependence on annealing temperature 12y y and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi films grown at 6508C on Si C and on Si. 2 0.999 0.001 Whereas the CoSi is fully polycrystalline on Si(001), partially oriented CoSi has been observed on C-containing substrate 2 2

layers. An increase of the number of epitaxially grown CoSi crystallites has been observed with increasing C concentration.

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