The Epitaxy of CoSi2 on Si Substrates: A Review
β Scribed by Shi-Li Zhang; Francois M. D'Heurle
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 27 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0931-7597
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π SIMILAR VOLUMES
Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i
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