Germanium is a suitable material as the buffer layer for the heteroepitaxial growth of InSb films on a Si 001 substrate. It reduces the large lattice mismatch of about 19.3% between Si and InSb to about 14.5%. InSb films grown on the islanded Ε½ . Β² : Ge buffer layers on a Si 001 substrate at elevat
β¦ LIBER β¦
Heteroepitaxial growth of InSb films on the patterned Si(001) substrate
β Scribed by T. Iwasugi; M. Mori; H. Igarashi; K. Murata; M. Saito; K. Maezawa
- Publisher
- Elsevier
- Year
- 2010
- Tongue
- English
- Weight
- 443 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1875-3892
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