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InSb films grown on the V-grooved Si(001) substrate with InSb bilayer

โœ Scribed by M. Mori; S. Khamseh; T. Iwasugi; K. Nakatani; K. Murata; M. Saito; K. Maezawa

Publisher
Elsevier
Year
2010
Tongue
English
Weight
360 KB
Volume
3
Category
Article
ISSN
1875-3892

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Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current
โœ M Mori; Y Nizawa; Y Nishi; K Mae; T Tambo; C Tatsuyama ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 943 KB

Germanium is a suitable material as the buffer layer for the heteroepitaxial growth of InSb films on a Si 001 substrate. It reduces the large lattice mismatch of about 19.3% between Si and InSb to about 14.5%. InSb films grown on the islanded ลฝ . ยฒ : Ge buffer layers on a Si 001 substrate at elevat