The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o
The heteroepitaxial growth of vacuum-deposited GaP thin films on Si substrates
β Scribed by V. Malina; J. Kohout
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 332 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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