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Disorder Effects on the Gap of Thin Si Nanocrystalline Films

✍ Scribed by S. Ménard; A. Saúl; F. Bassani; F. Arnaud d'Avitaya

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
169 KB
Volume
216
Category
Article
ISSN
0370-1972

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✦ Synopsis

The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation of the gap is more important for the smaller grains. Also the inter-grain distance produces the most important effect on the absolute gap variation. We find a variation of about 2 eV for the smaller grains in this case while it is only of 0.4 eV for the misorientation effect and of 0.2 eV for the film roughness.

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