Growth temperature effect on the heteroepitaxy of InSb on Si(111)

✍ Scribed by B.V Rao; T Okamoto; A Shinmura; D Gruznev; M Mori; T Tambo; C Tatsuyama

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 991 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00074-x

✦ Synopsis

Direct growth of InSb on Si 111 substrate is achieved by suitably adjusting the growth rate and substrate temperature. In this report, we detail the role of stoichiometry and growth temperature in the evolution of reflection high-energy electron Ž . Ž .Ž . diffraction RHEED patterns, surface morphology and the crystal quality. InSb is grown on Si 111 -7 = 7 surface by evaporating In and Sb simultaneously. Results indicate that smooth heteroepitaxial InSb films could be grown up to 3008C, and above this temperature, severe degradation in the epitaxial quality of the films is observed. Properties of the Sb-rich films are compared with those of In-rich films and the importance of stoichiometry in the crystal quality is discussed.