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Selective dry etching of InGaP over GaAs in inductively coupled plasmas

✍ Scribed by P. Leerungnawarat; H. Cho; D. C. Hays; J. W. Lee; M. W. Devre; B. H. Reelfs; D. Johnson; J. N. Sasserath; C. R. Abernathy; S. J. Pearton

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ChemInform Abstract: GaAs/InGaP Selectiv

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Low bias dry etching of III-nitrides in

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Etching characteristics of ZnO thin film

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