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Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

โœ Scribed by M. Kocan; G.A. Umana-Membreno; M.R. Kilburn; I.R. Fletcher; F. Recht; L. McCarthy; U.K. Mishra; B.D. Nener; G. Parish


Book ID
107455070
Publisher
Springer US
Year
2007
Tongue
English
Weight
267 KB
Volume
37
Category
Article
ISSN
0361-5235

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Implantation angle dependent study of va
โœ M.D.H. Lay; J.C. McCallum; C. Jagadish ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 205 KB

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 ร€ ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va