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Radiotracer Studies of Ion Implanted Profile Build-Up in Silicon Substrates

✍ Scribed by Manchester, K. E.


Book ID
126697150
Publisher
The Electrochemical Society
Year
1968
Tongue
English
Weight
906 KB
Volume
115
Category
Article
ISSN
0013-4651

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Implantation angle dependent study of va
✍ M.D.H. Lay; J.C. McCallum; C. Jagadish πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 205 KB

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 Γ€ ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va