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Scanning electron beam annealing of sputter-deposited titanium on silicon

✍ Scribed by M. Cervera; A. Climent-Font; J. Garrido; J. Martínez; J. Perrière

Book ID
113288089
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
543 KB
Volume
118
Category
Article
ISSN
0168-583X

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Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950°C and/or 300 s with a scanned an