๐”– Bobbio Scriptorium
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Annealing of ion implanted silicon using scanned laser and electron beams

โœ Scribed by Gibbons, J.


Book ID
119794608
Publisher
IEEE
Year
1979
Tongue
English
Weight
336 KB
Volume
15
Category
Article
ISSN
0018-9197

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Time-resolved scanned electron beam anne
โœ E.F. Krimmel; A.G.K. Lutsch ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 368 KB

Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950ยฐC and/or 300 s with a scanned an