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High speed scanning electron beam annealing of ion-implanted silicon layers

✍ Scribed by S. Schiller; S. Panzer; R. Klabes


Book ID
107862814
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
318 KB
Volume
73
Category
Article
ISSN
0040-6090

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Time-resolved scanned electron beam anne
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Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950Β°C and/or 300 s with a scanned an