✦ LIBER ✦

Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers

✍ Scribed by F.Y. Meng; I. Han; H. McFelea; E. Lindow; R. Bertram; C. Werkhoven; C. Arena; S. Mahajan

Book ID: 113899017
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 609 KB
Volume: 65
Category: Article
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2011.04.020

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray diffuse scattering from threading

X-ray diffuse scattering from threading dislocations in epitaxial GaN layers

✍ Barchuk, M.; HolyÌ, V.; MiljevicÌ, B.; Krause, B.; Baumbach, T.; Hertkorn, J.; 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 830 KB

The Atomic Structure of Threading Disloc

The Atomic Structure of Threading Dislocations from Low-Angle to High-Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers

✍ V. Potin; G. Nouet; P. Ruterana; R.C. Pond 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 195 KB 👁 2 views

Determination of threading dislocation d

Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

✍ Koppensteiner, E; Schuh, A; Bauer, G; Holy, V; Watson, G P; Fitzgerald, E A 📂 Article 📅 1995 🏛 Institute of Physics 🌐 English ⚖ 437 KB

Diffraction Contrast of Threading Disloc

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

✍ M. E. Twigg; Y. N. Picard; J. D. Caldwell; C. R. Eddy; M. A. Mastro; R. T. Holm; 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 364 KB

Filtering Study of Threading Dislocation

Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers

✍ Ponce, A. ;S�nchez, A.M. ;Molina, S.I. ;Fedler, F. ;Stemmer, J. ;Graul, J. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 147 KB 👁 2 views

Reduction of Etch Pit Density in Organom

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

✍ Iwaya, Motoaki; Takeuchi, Tetsuya; Yamaguchi, Shigeo; Wetzel, Christian; Amano, 📂 Article 📅 1998 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 180 KB