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Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

✍ Scribed by Koppensteiner, E; Schuh, A; Bauer, G; Holy, V; Watson, G P; Fitzgerald, E A

Book ID: 121373633
Publisher: Institute of Physics
Year: 1995
Tongue: English
Weight: 437 KB
Volume: 28
Category: Article
ISSN: 0022-3727
DOI: 10.1088/0022-3727/28/4A/022

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## Abstract Thick 3C‐SiC single crystals grown by continuous‐feed physical vapor transport (CF‐PVT) are studied by high‐resolution X‐ray reciprocal space mapping. These crystals contain Shockley‐type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along