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The Atomic Structure of Threading Dislocations from Low-Angle to High-Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers

✍ Scribed by V. Potin; G. Nouet; P. Ruterana; R.C. Pond


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
195 KB
Volume
216
Category
Article
ISSN
0370-1972

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