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S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO[sub 2]/Al[sub 2]O[sub 3] nanolaminates

✍ Scribed by Aguirre-Tostado, F. S.; Milojevic, M.; Choi, K. J.; Kim, H. C.; Hinkle, C. L.; Vogel, E. M.; Kim, J.; Yang, T.; Xuan, Y.; Ye, P. D.

Book ID: 126952830
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 589 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2961003

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