supply voltage, the broadband LNA exhibit a gain of 12.4 -12.7/ 17.3-18.6 dB, noise figure of ฯฝ5.5/4.9 dB, input return loss better than 15.7/12.8 dB, isolation better than 30/30 dB, IIP3 of ฯช10.5/ ฯช10 dBm and input P 1dB of ฯช19.5/ฯช18.5 dBm, respectively. Compared with previously reported UWB CMOS L
Rugged High-Linearity, Low-Noise Amplifier for 1.57-GHz GPS Band
โ Scribed by Stedler, C.; Werker, S.; Kronberger, R.
- Book ID
- 120045932
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 787 KB
- Volume
- 14
- Category
- Article
- ISSN
- 1527-3342
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๐ SIMILAR VOLUMES
## Abstract A monolithic concurrent dualโband lowโnoise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57โGHz (GPS) and 5.25โGHz (ISM) bands. It consumes only 15โmW power and achieves transdu
## Abstract This letter presents the implementation technique to reduce circuit area in designing 2.4 GHz CMOS lowโnoise amplifier (LNA) using size efficient inductors. We applied a vertically shunt (M6/M5) and a 3โD helical inductor to input and output matching network to obtain low noise figure a
## Abstract In this article, we demonstrate a miniaturized highโlinearity (IIP3 = 8 dBm at 4 GHz) 3โ5โGHz ultrawideband lowโnoise amplifier (LNA) implemented in a standard 0.18โฮผm CMOS technology. The inductiveโseries peaking technique was used to enhance the gain and bandwidth performances of the