supply voltage, the broadband LNA exhibit a gain of 12.4 -12.7/ 17.3-18.6 dB, noise figure of Ͻ5.5/4.9 dB, input return loss better than 15.7/12.8 dB, isolation better than 30/30 dB, IIP3 of Ϫ10.5/ Ϫ10 dBm and input P 1dB of Ϫ19.5/Ϫ18.5 dBm, respectively. Compared with previously reported UWB CMOS L
Noise and linearity optimization methods for a 1.9GHz low noise amplifier
✍ Scribed by Wei Guo; Da-quan Huang
- Book ID
- 111839936
- Publisher
- SP Zhejiang University Press
- Year
- 2003
- Tongue
- English
- Weight
- 394 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1009-3095
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract A 60‐GHz‐band low‐noise amplifier (LNA) using bulk 65‐nm CMOS technology is reported. To achieve sufficient gain, this LNA is composed of three cascade common‐source stages followed by a cascode output stage. Current‐sharing technique is adopted in the second and third stage to reduce p
## Abstract In this article, we demonstrate a miniaturized high‐linearity (IIP3 = 8 dBm at 4 GHz) 3–5‐GHz ultrawideband low‐noise amplifier (LNA) implemented in a standard 0.18‐μm CMOS technology. The inductive‐series peaking technique was used to enhance the gain and bandwidth performances of the