A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier
✍ Scribed by Mingqi Chen; Sutton, W.; Smorchkova, I.; Heying, B.; Wen-Ben Luo; Gambin, V.; Oshita, F.; Tsai, R.; Wojtowicz, M.; Kagiwada, R.; Oki, A.; Jenshan Lin
- Book ID
- 115497944
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 481 KB
- Volume
- 20
- Category
- Article
- ISSN
- 1531-1309
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## Abstract This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien