✦ LIBER ✦

A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 369 KB
Volume: 50
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.23803

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✦ Synopsis

Abstract

This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. The peak PAE and drain efficiency of 79.2 and 80.4% with a power gain of 18.14 dB is achieved at an output power of 41.14 dBm for a continuous wave. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2989–2992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23803

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