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A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong

Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 327 KB
Volume: 51
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.24150

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✦ Synopsis

Abstract

A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class‐E PA shows a drain efficiency and power‐added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below −51 dBc. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842–845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150

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✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 369 KB

## Abstract This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien