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A high efficiency class-F power amplifier using AIGaN/GaN HEMT

✍ Scribed by Sangwon Ko; Wenhsing Wu; Jenshan Lin; Soohwan Jang; Fan Ren; Stephen Pearton; Robert Fitch; James Gillespie

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
241 KB
Volume
48
Category
Article
ISSN
0895-2477

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✦ Synopsis

This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology

was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point of the output power was 24 dBm at 900 MHz. The peak power added efficiency of 38% was optimized at output power of 24.5 dBm, which is almost the same as the 1 dB compression point.

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