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Highly efficient class-F GaN HEMT Doherty amplifier for WCDMA applications

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
443 KB
Volume
50
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of −22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of −35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2328–2331, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23700

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