## Abstract This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐car
A highly linear and efficient two-stage GaN HEMT asymmetrical Doherty amplifier for WCDMA applications
✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 438 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this article, we propose a highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first‐stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving stage. The second‐stage main ADPA is optimized to achieve high efficiency at a 10‐dB back‐off power. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1464–1467, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24387
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