## Abstract In this article, we propose a highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first‐stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving
A highly linear and efficient three-way Doherty amplifier using two-stage GaN HEMT cells for repeater systems
✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; San-Ho Kam; Yoon-Ha Jeong
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 461 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this article, we propose a highly linear and efficient three‐way Doherty amplifier using two‐stage GaN HEMT cells for repeater systems. The driving cells are used as the predistortion circuit to improve linearity as well as the gain stage. The main cells are optimized to achieve high efficiency at a large back‐off power. After gate bias optimization of the driving cells, the proposed three‐way Doherty amplifier with two‐stage cells shows highly linear and efficient performance. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2895–2898, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24748
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## Abstract In this article, we propose the wideband digital predistortion (WDPD) for a highly linear and efficient GaN HEMT Doherty power amplifier (DPA). The WDPD is composed of the memory less DPD and the memory system, which compensates for the memory effects to achieve a highly linear wideband