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A 20 W GaN HEMT harmonic impedance tuned class-F power amplifier

✍ Scribed by Ji-Yeon Kim; Sang-Hyun Chun; Ho-Joon Yoo; Jong-Heon Kim; Shawn P. Stapleton


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
322 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

A design methodology of harmonic output impedance optimization is proposed to achieve high efficient power amplifier. First of all, the effects of harmonic impedances of high frequency and high power device on drain voltage and current are analyzed. The optimum harmonic impedance region for high efficiency improvement are suggested through the analysis of efficiency variations due to the internal impedance and output matching circuit of high frequency and high power device. From the measured results, a GaN harmonic tuned class‐F amplifier has achieved 77% drain efficiency at the output power of 20 W. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 779–782, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24164


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