## Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement
A 20 W GaN HEMT harmonic impedance tuned class-F power amplifier
✍ Scribed by Ji-Yeon Kim; Sang-Hyun Chun; Ho-Joon Yoo; Jong-Heon Kim; Shawn P. Stapleton
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 322 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A design methodology of harmonic output impedance optimization is proposed to achieve high efficient power amplifier. First of all, the effects of harmonic impedances of high frequency and high power device on drain voltage and current are analyzed. The optimum harmonic impedance region for high efficiency improvement are suggested through the analysis of efficiency variations due to the internal impedance and output matching circuit of high frequency and high power device. From the measured results, a GaN harmonic tuned class‐F amplifier has achieved 77% drain efficiency at the output power of 20 W. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 779–782, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24164
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